| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor surface light emitting device having a plurality of wavelengths on the same substrate using the MOVPE (Metal Organic Vapor Phase Epitaxy) selective growth method. <P>SOLUTION: A semiconductor light emitting device array comprising: a semiconductor crystal substrate; an insulating film arranged on the surface of the substrate, divided into two or more regions, wherein two or more openings that expose the surface of the substrate are formed in the two or more regions, respectively; a semiconductor rod extending upward from the surface of the substrate through the opening, on which an n-type semiconductor layer and a p-type semiconductor layer are laminated in the extending direction, and having a p-n junction; a first electrode connected to the semiconductor crystal substrate; and a second electrode connected to the upper part of the semiconductor rod, wherein the height from the substrate surface of the semiconductor rod differs for every region. <P>COPYRIGHT: (C)2009,JPO&INPIT |
