| 发明名称 | Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration | ||
| 摘要 | To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed. | ||
| 申请公布号 | US9437428(B2) | 申请公布日期 | 2016.09.06 |
| 申请号 | US201414552064 | 申请日期 | 2014.11.24 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd. | 发明人 | Oota Masashi;Ishihara Noritaka;Nakashima Motoki;Kurosawa Yoichi;Yamazaki Shunpei;Hosaka Yasuharu;Obonai Toshimitsu;Koezuka Junichi |
| 分类号 | H01L21/02;H01L49/02;H01L29/66;H01L29/786 | 主分类号 | H01L21/02 |
| 代理机构 | Robinson Intellectual Property Law Office | 代理人 | Robinson Intellectual Property Law Office ;Robinson Eric J. |
| 主权项 | 1. A method for manufacturing a semiconductor device, comprising the steps of: forming an oxide semiconductor film over a first insulating film; performing a first heat treatment in a vacuum atmosphere where oxygen in the oxide semiconductor film is released; performing a second heat treatment in a hydrogen-containing atmosphere to form an oxide semiconductor film having conductivity after the first heat treatment, and wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×1020 atoms/cm3. | ||
| 地址 | Kanagawa-ken JP | ||