发明名称 |
High Q factor integrated circuit inductor |
摘要 |
An inductor and a method of forming and the inductor, the method including: (a) providing a semiconductor substrate; (b) forming a dielectric layer on a top surface of the substrate; (c) forming a lower trench in the dielectric layer; (d) forming a resist layer on a top surface of the dielectric layer; (e) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (f) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.
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申请公布号 |
US7068138(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20040768773 |
申请日期 |
2004.01.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDELSTEIN DANIEL C.;ANDRICACOS PANAYOTIS C.;COTTE JOHN M.;DELIGIANNI HARIKLIA;MAGERLEIN JOHN H.;PETRARCA KEVIN S.;STEIN KENNETH J.;VOLANT RICHARD P. |
分类号 |
H01F27/24;H01F41/04;H01F17/00;H01L21/02;H01L23/485;H01L23/522;H01L23/532;H01L27/08 |
主分类号 |
H01F27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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