Conductor component for protecting microelectronic system from overvoltage - comprises bidirectional thyristor diode with highly-doped surface region and high gradient of free charge carrier at predefined distance from oppositely doped base region

摘要

The overvoltage conductor component is based on a two directional thyristor diode with high switching symmetry and adjustable switching hysteresis. A highly-doped surface region is arranged at a predefined distance (So) from an oppositely doped base region. The highly doped surface region has a high gradient of free charge carrier. A surface shunt with adjustable resistance is arranged between the highly-doped emitter region and the outer most edge of the base area appearing on the surface. USE/ADVANTAGE - Effectively protects microelectronic system from destruction by voltage spikes. Switch hysteresis can be adapted to special requirements of particular applications.