发明名称 |
Method of forming salicide poly gate with thin gate oxide and ultra narrow gate width |
摘要 |
I A method is achieved for removing a hardmask from a feature on a semiconductor wafer. The method comprises the following phases: depositing a buffer layer overall; etching back the buffer layer in an etching apparatus to expose the hardmask; etching the hardmask in the etching apparatus; and etching of the remaining buffer layer in the etching apparatus.
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申请公布号 |
US6165881(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19980177185 |
申请日期 |
1998.10.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
TAO, HUN-JAN;TSAI, CHIA-SHIUNG |
分类号 |
H01L21/027;H01L21/311;H01L21/336;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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