| 摘要 |
PURPOSE:To prevent the generation of the disconnection of the insulating film on a first wiring formed in a transistor part and the leakage between the first wiring and other conductive part. CONSTITUTION:A lower layer wiring 22 which is the first wiring is formed on a substrate 20 and thereafter a negative resist of a rubber system is formed on the lower layer wiring 22 part constituting a conductive part 17 and the lower layer wiring 22 is anodically oxidized. The anodic oxidation is executed uniformly in the exposed part of the lower layer wiring 22 and, therefore, the disconnection of the anodically oxidized film 23 hardly arises and the leakage hardly arises in the lower layer wiring 22. Since the part covered with the negative resist of the lower layer wiring 22 is not anodically oxidized, the conductive part 17 between both wirings is obtd. when upper layer wiring 26 is formed thereon. |
