发明名称 |
Process for fabricating ULSI CMOS circuits using a single polysilicon gate layer and disposable spacers |
摘要 |
This invention is a process for fabricating ultra-large-scale integration CMOS circuits using a single polysilicon gate layer for both N-channel and P-channel devices, a single mask step for defining the gates of both N-channel and P-channel devices, the fabrication of one set of disposable spacers for N-channel implants, and the fabrication of another set of disposable spacers for P-channel source/drain implants. The set of spacers used for P-channel implants also comprises material deposited to fabricate the spacers for the N-channel implants. The process is adaptable to LDD structures for both N-channel and P-channel devices or for only N-channel devices. The process is also compatible with anti-punchthrough implants for both types of devices.
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申请公布号 |
US5405791(A) |
申请公布日期 |
1995.04.11 |
申请号 |
US19940317280 |
申请日期 |
1994.10.04 |
申请人 |
MICRON SEMICONDUCTOR, INC. |
发明人 |
AHMAD, AFTAB;LOWREY, TYLER A. |
分类号 |
H01L21/8238;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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