发明名称 MULTILAYER FILM REFLECTION MIRROR, MANUFACTURING METHOD, AND EUV EXPOSURE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a multilayer film reflection mirror of low reflectance reduction, a manufacturing method therefor, and an exposure device using the multilayer film reflection mirror. <P>SOLUTION: A multilayer film can be formed while separating a substrate 81 distantly from plasma, by forming the multilayer film 83 on the substrate 81 with a magnetron spattering method using a superconductive manget, and the damage onto the film under the film formation is thereby reduced. A diffusion layer formed on a multilayer film interface can be thinned as a result, so as to provide the multilayer film reflection mirror 80 of low reflectance reduction. Exposure of high through-put can be also carried out by using the multilayer film reflection mirror 80 of high reflectance in an optical system of the exposure device. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006267054(A) 申请公布日期 2006.10.05
申请号 JP20050089474 申请日期 2005.03.25
申请人 NIKON CORP 发明人 TOMOFUJI TETSUYA
分类号 G21K1/06;C23C14/35;G02B5/08;G21K5/02;H01L21/027 主分类号 G21K1/06
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