Plasma-etching process for the rapid and damage-free cleaning of reaction chambers used principally in the deposition or etching of layers on silicon substrats,申请号EP19920121509-传众专利搜索

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发明名称	Plasma-etching process for the rapid and damage-free cleaning of reaction chambers used principally in the deposition or etching of layers on silicon substrats
摘要
申请公布号	EP0553469(B1)	申请公布日期	1997.03.19
申请号	EP19920121509	申请日期	1992.12.17
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	GABRIC, ZVONIMIR;GSCHWANDTNER, ALEXANDER, DR. DIPL.-PHYSIKER;SPINDLER, OSWALD, DR. DIPL.-CHEMIKER
分类号	C23F4/00;C23C16/44;C23G5/00;H01L21/302;H01L21/304;H01L21/3065;H01L21/31;(IPC1-7):C23C16/44;H01J37/32	主分类号	C23F4/00
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