THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a thin film transistor in which Joule heat is applied to a glass substrate arranged below an amorphous silicon layer to produce stress gradients of a predetermined depth from the surface of the glass substrate and to crystallize the amorphous silicon layer into a polycrystalline silicon layer, thereby improving crystallinity, and relates also to a manufacturing method of the thin film transistor. The present invention provides a thin film transistor comprising: a glass substrate having stress gradients formed at a predetermined depth from an upper surface thereof; a semiconductor layer formed on the glass substrate, and consisting of a polycrystalline silicon layer crystallized by Joule heating; a gate insulation layer formed on the semiconductor layer; a gate electrode formed on the gate insulation layer; an interlayer insulation layer formed on the gate electrode; and a source/drain electrode formed on the interlayer insulation layer and electrically connected to a source/drain region of the semiconductor layer.