发明名称 |
Semiconductor memory device and method for manufacturing same |
摘要 |
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a semiconductor film, a memory film, an interconnect portion, and first and second insulating films. The first and second insulating films are provided on the interconnect portion. The interconnect portion includes first and second interconnect portions. The first interconnect portion is provided on the substrate. A width of a cross-section of the second interconnect portion decreases with increased distance from the substrate. The first insulating film is provided on side surfaces of the first and second interconnect portions. The second insulating film includes first to third portions. The first portion is provided on an upper surface of the interconnect portion. The first insulating film is provided between the second portion and the side surface of the second interconnect portion. The third portion extends in a second direction crossing the stacking direction and the first direction. |
申请公布号 |
US9530697(B1) |
申请公布日期 |
2016.12.27 |
申请号 |
US201615050711 |
申请日期 |
2016.02.23 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Nakaki Hiroshi |
分类号 |
H01L21/336;H01L29/66;H01L21/8234;H01L23/535;H01L27/115 |
主分类号 |
H01L21/336 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for manufacturing a semiconductor memory device, comprising:
alternately stacking, on a substrate, an insulating layer and a first layer to form a stacked body; forming, in the stacked body, a through-hole extending in a stacking direction of the stacked body; forming, in the through-hole, a columnar portion including a memory film and a semiconductor film; forming a first insulating layer on the stacked body and the columnar portion; forming, in the stacked body and the first insulating layer, a trench extending in the stacking direction and a first direction crossing the stacking direction; removing the first layer through the trench; forming a conductive layer in a cavity resulting from the removal of the first layer through the trench; forming a first insulating film in the trench; forming a conductive film on the first insulating film in the trench; removing a portion of the first insulating layer, a portion of the first insulating film, and a portion of the conductive film to form a plate-like interconnect portion including a protruding portion whose width in cross-section decreases with increased distance from the substrate; forming a second insulating film on a side surface of the protruding portion; and forming a third insulating film including a first portion provided on an upper surface of the interconnect portion, a second portion provided on the second insulating film, and a third portion extending in a second direction crossing the stacking direction and the first direction. |
地址 |
Minato-ku JP |