| 摘要 |
PURPOSE:To improve a resolution, sensitivity and heat resistance and to obtain the performance adequate as a resist for high density integrated circuits by incorporating a novolak resin, quinonediazide compd. and specific compd. into the above compsn. CONSTITUTION:This compsn. contains the novolak resin, the quinonediazide compd. and the compd. expressed by formula I. In the formula I, R<1> to R<3> denote the one selected from a group consisting of a hydrogen atom, alkyl group, aralkyl group, and aryl group; R<4> to R<11> denote the one selected from a group consisting of a hydrogen atom, halogen atom,, hydroxyl group, and alkyl group; (m) denotes 0 to 3: (n) denotes 0 to 1. The positive type photoresist compsn. having the improved resolution, sensitivity and heat resistance is obtd. in this way. |
