| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide crystal by a solution process capable of suppressing generation of miscellaneous crystals caused by rapid fluctuation of temperature distribution in a solution when a seed crystal is brought into contact with the solution, and thus improving crystal quality.SOLUTION: A manufacturing method of a silicon carbide crystal includes a preparation step for preparing a seed crystal 3, a crucible 5, a heater 10 arranged around the crucible 5, and a solution 6 heated by the heater 10, a contacting step for bringing the seed crystal 3 into contact with the solution 6, and a growing step for drawing up the seed crystal 3 to grow a silicon carbide crystal on the surface of the seed crystal 3. After the seed crystal 3 is brought into contact with the solution 6 in the contacting step so as to keep temperature distribution in the solution 6 before and after the contact of the seed crystal 3 with the solution 6, a crystal 2 of silicon carbide is grown from the solution 6 on the surface of the seed crystal 3.SELECTED DRAWING: Figure 1 |
