| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light-emitting element capable of improving light-emitting efficiency and reliability, and to provide a manufacturing method thereof. <P>SOLUTION: A main body 100 has an n-type ZnO single crystal substrate 101, an n-type Mg<SB>0.1</SB>Zn<SB>0.9</SB>O cladding layer 102, a non-doped quantum well light-emitting layer 103, a p-type Mg<SB>0.1</SB>Zn<SB>0.9</SB>O cladding layer 104, a p-type ZnO contact layer 105, and a p-type ohmic electrode 106. An Mn-doped Zn<SB>2</SB>SiO<SB>4</SB>phosphor 109 is deposited on the top surface of the main body 100. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
