| 发明名称 |
POWER SEMICONDUCTOR DEVICE |
| 摘要 |
A power semiconductor device includes: an outer case; at least one press-fit terminal buried in a top surface of the outer case; and a plurality of supporting portions formed so as to protrude from the top surface of the outer case. A top end of the press-fit terminal protrudes more than top surfaces of the supporting portions from the top surface of the outer case. |
| 申请公布号 |
US2016336245(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201615145056 |
申请日期 |
2016.05.03 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
EGUSA Minoru;ISHIBASHI Hidetoshi;OTSUBO Yoshitaka;MASUMOTO Hiroyuki;KAWATA Hiroshi |
| 分类号 |
H01L23/055;H01R12/58 |
主分类号 |
H01L23/055 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
an outer case; at least one press-fit terminal buried in a top surface of said outer case; and a plurality of supporting portions formed so as to protrude from the top surface of said outer case, wherein a top end of said press-fit terminal protrudes more than top surfaces of said supporting portions from the top surface of said outer case. |
| 地址 |
Tokyo JP |
