发明名称 |
Self-aligned silicide manufacturing method |
摘要 |
An improved self-aligned silicide manufacturing method in which prior to the formation of a heat resistant metallic layer on top of a silicon substrate, a treatment of exposed surfaces of a gate terminal and source/drain diffusion regions is performed to increase surface roughness enabling an increase in crystallization nucleus number, as well as lowering crystallization temperature.
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申请公布号 |
US5893751(A) |
申请公布日期 |
1999.04.13 |
申请号 |
US19960736939 |
申请日期 |
1996.10.25 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
JENQ, JASON;CHEN, TUNG-PO |
分类号 |
H01L21/285;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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