发明名称 |
Ge channel device and method for fabricating ge channel device |
摘要 |
The Ge channel device comprises: a Ge channel layer (2); a Si-containing interface layer (4) formed on the Ge channel layer (2); a La2O3 layer (6) formed on the interface layer (4); and an electrically conductive layer (8) formed on the La2O3 layer (6). In this device, the Si-containing interface layer (4) functions to suppress the diffusion of Ge atoms into the La2O3 layer (6) and thereby prevents the formation of Ge oxide in the La2O3 layer (6); accordingly, a Ge channel device whose C-V characteristic exhibits only a small hysteresis can be achieved.
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申请公布号 |
US2009057739(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20080230448 |
申请日期 |
2008.08.28 |
申请人 |
TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
IWAI HIROSHI;HATTORI TAKEO;TSUTSUI KAZUO;KAKUSHIMA KUNIYUKI;AHMET PARHAT;SONG JAEYEOL;YOSHIMARU MASAKI;MISHIMA YASUYOSHI;AOYAMA TOMONORI;OJI HIROSHI;KATO YOSHITAKE |
分类号 |
H01L29/78;H01L21/3205 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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