Memory cell with schottky diode

摘要

Memory cell comprising two conductors, with a serially connected magnetic storage element and a Schottky diode between the two conductors. The Schottky diode provides a unidirectional conductive path between the two conductors and through the element. The Schottky diode is formed between a metal layer in one of the two conductors and a processed junction layer. Methods for process and for operation of the memory cell are also disclosed. The memory cell using the Schottky diode can be designed for high speed operation and with high density of integration. Advantageously, the junction layer can also be used as a hard mask for defining the individual magnetic storage element in the memory cell. The memory cell is particularly useful for magnetic random access memory (MRAM) circuits.

主权项

1. A method of fabricating a magnetic memory cell, comprising:
forming a word line of the magnetic memory cell; forming a fixed layer of a magnetic storage element on the word line; forming a tunnel oxide layer of the magnetic storage element on the fixed layer; forming a free layer of the magnetic storage element on the tunnel oxide layer; forming a junction layer of a Schottky diode on the free layer, wherein the Schottky diode is formed between the junction layer and a metal layer; forming a masking layer on the junction layer; etching the junction layer based on the masking layer to form the Schottky diode; stripping the masking layer from the junction layer; etching the fixed layer, the tunnel oxide layer, and the free layer, using the stripped junction layer as another masking layer to form the magnetic storage element; forming a via hole connected between the word line and the fixed layer; and forming a bit line of the magnetic memory element on the stripped junction layer.