发明名称 Mask pattern generation method
摘要 A method for generating a pattern of a mask includes obtaining data of a plurality of polygons representing a plurality of pattern elements, grouping polygons which overlap or contact with each other among the plural polygons in one group, not setting an evaluation position for evaluating an image of a pattern of the one group on a line segment of sides which overlap or contact with each other among sides of the polygon of the one group, and setting an evaluation position at a portion except for the line segment, and repeating calculating the image of the pattern of the one group, evaluating the calculated image at the set evaluation position, and correcting the pattern based on a result of the evaluating, and generating the pattern of the mask based on a result of the repeating step.
申请公布号 US9372408(B2) 申请公布日期 2016.06.21
申请号 US201414579667 申请日期 2014.12.22
申请人 CANON KABUSHIKI KAISHA 发明人 Arai Tadashi
分类号 G06F17/50;G03F7/30;G03F1/00 主分类号 G06F17/50
代理机构 Canon USA, Inc. IP Division 代理人 Canon USA, Inc. IP Division
主权项 1. A method for generating a pattern of a mask used for a mask manufacturing method for manufacturing the mask using data of the generated pattern of the mask, the method comprising the following steps performed by a processor: obtaining data of a plurality of polygonal pattern elements; grouping polygonal pattern elements which overlap or contact with each other among the plurality of polygon pattern elements in one group; setting an evaluation position for evaluating an image of the polygonal pattern elements of the one group on a side except for sides which overlap or contact with each other among sides of the polygonal pattern elements of the one group; calculating the image of the polygonal pattern elements of the one group; evaluating the calculated image at the set evaluation position; correcting the polygonal pattern element based on a result of the evaluating; and generating the pattern of the mask including the corrected polygonal pattern element, wherein the mask manufacturing method comprises a step of manufacturing the mask including the generated pattern using data of the generated pattern, and wherein the corrected polygonal pattern element of the manufactured mask are resolved on a substrate.
地址 Tokyo JP