| 发明名称 |
THIN FILM DIELECTRIC STACK |
| 摘要 |
A system that incorporates teachings of the subject disclosure may include, for example, a fabricated thin film capacitor formed by depositing a first dielectric layer on a first electrode layer utilizing a first process that is performed at a first temperature, depositing a second dielectric layer on the first dielectric layer utilizing a second process that forms a randomly-oriented grain structure for the second dielectric layer, depositing a third dielectric layer on the second dielectric layer utilizing a third process that is performed at a second temperature and that forms a columnar-oriented grain structure for the third dielectric layer where the second temperature is higher than the first temperature, and depositing a second electrode layer on the third dielectric layer to form the thin film capacitor. Other embodiments are disclosed. |
| 申请公布号 |
US2016268048(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201514642222 |
申请日期 |
2015.03.09 |
| 申请人 |
BlackBerry Limited |
发明人 |
Zelner Marina;Nagy Susan;Cervin Andrew Vladimir Claude |
| 分类号 |
H01G4/33;H01G4/012;H01G4/12;H01L49/02 |
主分类号 |
H01G4/33 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a thin film capacitor, the method comprising:
depositing a first dielectric layer on a first electrode layer utilizing a first process that is performed at a first temperature; depositing a second dielectric layer on the first dielectric layer utilizing a second process that forms a randomly-oriented grain structure for the second dielectric layer; depositing a third dielectric layer on the second dielectric layer utilizing a third process that is performed at a second temperature and that forms a columnar-oriented grain structure for the third dielectric layer, wherein the second temperature is higher than the first temperature; and depositing a second electrode layer on the third dielectric layer to form the thin film capacitor. |
| 地址 |
Waterloo CA |
