发明名称 LIGHT REFLECTION TYPE LITHOGRAPHY MASK, METHOD OF MANUFACTURING THE SAME, METHOD OF PRODUCING MASK DATA, AND MASK BLANK
摘要 PROBLEM TO BE SOLVED: To provide a light reflection type lithography mask reduced in projection effect, a method of manufacturing the same, a method of producing mask data, and a mask blank.SOLUTION: The light reflection type lithography mask includes a substrate, and a reflection layer. The reflection layer is provided on the substrate, and has a first pattern and a second pattern in a top face view thereof. The second pattern is provided at a position nearest to at least any one of one side of the first pattern and the other side of the first pattern. The reflectivity of a part provided with the first pattern is different from a reflectivity of a part provided with the second pattern.SELECTED DRAWING: Figure 1
申请公布号 JP2016173392(A) 申请公布日期 2016.09.29
申请号 JP20150052151 申请日期 2015.03.16
申请人 TOSHIBA CORP 发明人 TAKAI KOSUKE
分类号 G03F1/24;H01L21/3065 主分类号 G03F1/24
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