| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high frequency power amplifier capable of improving strain characteristics when a multi-finger type transistor is employed. <P>SOLUTION: The high-frequency power amplifier is provided with a multi-finger type transistor with a plurality of transistor cells connected electrically in parallel, an input side matching circuit connected to the gate electrodes of a plurality of transistor cells and resonant circuits respectively connected between the gate electrodes of respective transistor cells and the input side matching circuit while the resonant circuit is resonated with a frequency of secondary harmonics of operating frequency of the transistor or within a predetermined range of frequency having the center at the secondary harmonics of the operating frequency to give short-circuit or a sufficiently low load to the gate electrode. <P>COPYRIGHT: (C)2007,JPO&INPIT |
