Bidirectional two-base bipolar junction transistor operation, circuits, and systems with collector-side base driven

摘要

Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

主权项

1. A method for switching a power semiconductor device which includes first emitter/collector and base contact regions on a first surface of a semiconductor die, and second emitter/collector and base contact regions on a second surface of the die; wherein the emitter/collector regions both have a first conductivity type, and the base contact regions and the semiconductor die all have a second conductivity type; comprising the steps:
in the ON state, when an external voltage difference applied between the first and second emitter/collector regions has a polarity such that the first and second emitter/collector regions can act as collector and emitter respectively, flowing base current through the first base contact region, but substantially not through the second base contact region; and in the OFF state, not flowing external current through either of the base contact regions; whereby bidirectional switching is achieved with an on-state voltage drop which is less than a diode drop between the semiconductor die and a respective one of the emitter/collector regions.