Semiconductor light-emitting device

摘要

A semiconductor light-emitting device includes a light-emitting structure that includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer, and a bonding conductive layer connected to the electrode layer. The bonding conductive layer includes a main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer, and a filling bonding layer filling at least a part of the recess area.

主权项

1. A semiconductor light-emitting device comprising:
a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer; and a bonding conductive layer connected to the electrode layer, wherein the bonding conductive layer comprises: a conductive main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer; and a conductive filling bonding layer filling at least a part of the recess area, wherein the semiconductor light-emitting device further comprises a filling insulating layer covering a part of the bonding conductive layer on a same level as the bonding conductive layer, and wherein the filling insulating layer comprises an insulating layer that contacts and insulates the bonding conductive layer, and a metal layer that fills a recess in the insulating layer defined by a stepped portion of the insulating layer under the recess.