| 摘要 |
A solid-state image sensor includes a pixel region (101) and peripheral circuit region (102) arranged on a semiconductor substrate. The pixel region (101) includes pixels. Each pixel includes a photoelectric conversion element (33) and an amplification MOS transistor (5) that outputs a signal corresponding to charges of the photoelectric conversion element (33) to a column signal line. The peripheral circuit region (102) includes a circuit that drives the pixel or processes the signal output to the column signal line. A resistance of a source region of the amplification MOS transistor (5) is lower than a resistance of a drain region of the amplification MOS transistor. |
