| 发明名称 | Low-k damage repair and pore sealing agents with photosensitive end groups | ||
| 摘要 | Methods of repairing damaged low-k dielectric films using UV-activated photosensitive organic compounds are described herein. Methods of sealing pores by exposing porous dielectric films to UV-activated large photosensitive organic compounds are also described. Methods also include mechanically reinforcing dielectric films using photosensitive organic compounds activated by UV radiation. Compounds include at least one photosensitive end group, such as an unsaturated bond or group with high ring strain. | ||
| 申请公布号 | US9502255(B2) | 申请公布日期 | 2016.11.22 |
| 申请号 | US201414517732 | 申请日期 | 2014.10.17 |
| 申请人 | Lam Research Corporation | 发明人 | Antonelli George Andrew;McKerrow Andrew John |
| 分类号 | H01L21/268;H01L21/3105;H01L21/67 | 主分类号 | H01L21/268 |
| 代理机构 | Weaver Austin Villeneuve & Sampson LLP | 代理人 | Weaver Austin Villeneuve & Sampson LLP |
| 主权项 | 1. A method of sealing pores in a low-k dielectric substrate, the method comprising: exposing a photosensitive organic compound to ultraviolet radiation to form an activated species, and after forming the activated species, exposing the substrate to the activated species to thereby seal pores,wherein the diameter of the photosensitive organic compound is greater than about 1 nm. | ||
| 地址 | Fremont CA US | ||