发明名称 METHOD AND ARRANGEMENT FOR PREDICTING THERMALLY-INDUCED DEFORMATIONS OF SUBSTRATE, AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for correcting thermally-induced field deformations of a lithographically exposed substrate. <P>SOLUTION: First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate, and a distance between the selected points and an edge of the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007110130(A) 申请公布日期 2007.04.26
申请号 JP20060278442 申请日期 2006.10.12
申请人 ASML NETHERLANDS BV 发明人 MENCHTCHIKOV BORIS;DE JONG FREDERIK E
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
代理机构 代理人
主权项
地址