Method of forming a fin-like BJT

摘要

A bipolar junction transistor (BJT) formed using a fin field-effect transistor (FinFET) complimentary metal-oxide-semiconductor (CMOS) process flow is provided. The BJT includes an emitter fin, a base fin, and a collector fin formed on a substrate. The base fin encloses the emitter fin and collector fin encloses the emitter fin. In some embodiments, the emitter fin, base fin, and collector fin have a square shape when viewed from above and are concentric with each other.

主权项

1. A method of forming a bipolar junction transistor (BJT), the method comprising:
forming one or more first semiconductor fins, one or more second semiconductor fins, and one or more third semiconductor fins, the one or more second semiconductor fins extending around the first semiconductor fins, the third semiconductor fins extending around the second semiconductor fins; forming isolation regions between adjacent ones of the first semiconductor fins, the second semiconductor fins, and the third semiconductor fins, wherein the first semiconductor fins, the second semiconductor fins, and the third semiconductor fins extend above the isolation regions; and electrically coupling the first semiconductor fins as an emitter, the second semiconductor fins as a base, and the third semiconductor fins as a collector of the BJT, wherein an interior region of an innermost first semiconductor fin of the first semiconductor fins is free of a base fin.