| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment equipment capable of making in-plane temperature distribution of a substrate uniform.SOLUTION: In a heat treatment equipment, when a semiconductor wafer W is pre-heated, there exists nonuniformity in temperature distribution, with temperature of a peripheral part WS being lower than a central region. A laser beam entering from an incident side end 45b of a light guide rod 45 advances inside the quartz light guide rod 45 toward an exiting side end 45a cylindrically. The laser beam, that has arrived at the exiting side end 45a, is totally reflected on an inner sidewall surface of a conical recess 45c, and emitted toward the peripheral part WS of the semiconductor wafer W from an outer sidewall surface of the recess 45c. The laser beam at the center of the cylinder is totally reflected on an apex of the recess 45c and arrives at an edge WE of the semiconductor wafer W, and the laser beam at a side surface is totally reflected on a side surface of the recess 45c and arrives at an inner periphery of the peripheral part WS. As a result, the laser beam emitted from the light guide rod 45 is radiated in annular shape on the peripheral part WS of the semiconductor wafer W, thereby making in-plane temperature distribution of the wafer uniform. |
