| 发明名称 |
SEMICONDUCTOR STRUCTURE HAVING LOGIC REGION AND ANALOG REGION |
| 摘要 |
A method can include epitaxially growing epitaxial growth material within a logic region of a semiconductor structure. A method can include performing simultaneously with the growing epitaxial growth within an analog region of the semiconductor structure. A method can include performing epitaxial growth to form an epitaxial growth formation that defines an electrode of an analog device within an analog region of the semiconductor structure, wherein the performing includes using a first surface and a second surface as seed surfaces. |
| 申请公布号 |
US2016322384(A1) |
申请公布日期 |
2016.11.03 |
| 申请号 |
US201514700748 |
申请日期 |
2015.04.30 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
ZANG Hui;LIU Bingwu;WU Xusheng |
| 分类号 |
H01L27/12;H01L29/66;H01L29/06;H01L29/78;H01L29/73;H01L29/08;H01L21/84;H01L21/02 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor structure, the method comprising:
growing epitaxial growth material to form an epitaxial growth formation that defines an active logic device within a logic region of a semiconductor structure; performing, simultaneously with the growing, epitaxial growth to form an epitaxial growth formation that defines an analog device within an analog region of the semiconductor structure. |
| 地址 |
Grand Cayman KY US |
