Programmable read only memory

摘要

A programmable read-only memory including word lines and bit columns, wherein the columns (good conductors) are less resistive than the word lines (resistive conductors or bands) and wherein the programming is facilitated by the inclusion of one or more shunt paths which are good conductors and which are intended to channel programming current away from at least one of the word lines formed in a semiconductor substrate as a result of their being connected to these word lines or resistive bands via semiconductor structures, the conductive state of which can be controlled by applying a difference of potential between the word line and the bit column with which the memory element to be destroyed is associated.