发明名称 Dopants for semiconducting materials
摘要 A magnesium amide for use as a magnesium donor not having any Mg-C bonds. The compound is useful for doping GaN with Mg+2. The compound of the present invention is a high molecular weight dimer, preferably a diamide containing one or more silicon substituent groups. Alternatively, the compounds of the present invention may contain amino nitrogens weakly bonded to Mg. The compounds must have sufficient volatility to be useful in chemical vapor deposition.
申请公布号 US6156917(A) 申请公布日期 2000.12.05
申请号 US19970889972 申请日期 1997.07.10
申请人 GEORGIA TECH RESEARCH CORPORATION 发明人 REES, JR., WILLIAM S.;LUTEN, III, HENRY A.
分类号 C07F7/10;(IPC1-7):C07F7/10 主分类号 C07F7/10
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