| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve etching resistance under etching conditions in pattern transfer to an organic film, as well as to allow fine pattern formation by suppressing pattern collapse due to swelling as much as possible. <P>SOLUTION: The resist composition comprises (A) a silicone resin obtained by cohydrolysis and condensation of a hydrolyzable silane monomer mixture including compounds of formula (1) as shown in Fig., formula (2): R<SP>5</SP>R<SP>6</SP><SB>q</SB>SiX<SB>3-q</SB>, and formula (3): R<SP>7</SP>R<SP>8</SP><SB>r</SB>SiX<SB>3-r</SB>, (B) an acid generator, (C) a nitrogen-containing organic compound and (D) an organic solvent, wherein R<SP>1</SP>-R<SP>3</SP>are each H, F, an alkyl group or a fluoroalkyl group, provided that at least one of R<SP>1</SP>-R<SP>3</SP>contains F; R<SP>4</SP>is a hydrocarbon group; R<SP>5</SP>is an organic group having a carboxyl group protected by an acid-decomposable protective group as a functional group; R<SP>6</SP>is the same as R<SP>4</SP>: R<SP>7</SP>is an organic group having a lactone ring as a functional group: R<SP>8</SP>is a hydrocarbon group; X is H, Cl, Br or an alkoxy group; p is 0 or 1; q is 0 or 1; and r is 0 or 1. The resist composition shows resolution equal to or higher than that of a conventional composition having an alcohol in which near-position carbon has been fluorinated as a functional group, has no problem on etching selectivity in oxygen reactive etching, and is suitable for a two-layer resist method in ArF exposure. <P>COPYRIGHT: (C)2007,JPO&INPIT |
