METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

A method of forming a semiconductor device includes following steps. Firstly, a substrate having a transistor is provided, where the transistor includes a source/drain region. A dielectric layer is formed on the substrate, and a contact plug is formed in the dielectric layer to electrically connect the source/drain region. Next, a mask layer is formed on the dielectric layer, where the mask layer includes a first layer and a second layer stacked thereon. After this a slot-cut pattern is formed on the second layer of the mask layer, and a contact slot pattern is formed on the first layer of the mask layer. Finally, the second layer is removed and a contact opening is formed by using the contact slot pattern on the first layer.

主权项

1. A method of forming a semiconductor device, comprising:
providing a substrate having a transistor, wherein the transistor comprises a gate structure and a source/drain; forming a first dielectric layer covering the substrate; forming a first contact plug in the first dielectric layer, wherein the first contact plug is electrically connected to the source/drain; forming a second dielectric layer on the first dielectric layer; forming a mask layer on the second dielectric layer, wherein the mask layer comprises a multilayer structure having a first layer and a second layer stacked on the first layer; forming a slot-cut pattern on the second layer; forming a contact slot pattern on the first layer; removing the second layer; and forming a first contact slot in the second dielectric layer through the contact slot pattern on the first layer.