| 发明名称 |
Plasma etch process. |
| 摘要 |
An improved SiOx etch which employs CHF3, N2 and a light mass cooling gas in total pressure on the order of 3000mT in a confined plasma reactor. High aspect ratios at least 10:1 are obtainable. <IMAGE> |
| 申请公布号 |
EP0596593(A1) |
申请公布日期 |
1994.05.11 |
| 申请号 |
EP19930306236 |
申请日期 |
1993.08.06 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GUPTA, SUBHASH;CHEN, SUSAN H. |
| 分类号 |
C23F4/00;H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;H01L23/522 |
主分类号 |
C23F4/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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