发明名称 HOLOGRAM EXPOSURE APPARATUS, HOLOGRAM EXPOSURE METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING ELECTRO-OPTICAL DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a hologram exposure apparatus with which a stable exposure state can be obtained even if a substrate is large in size, a hologram exposure method employing this hologram exposure apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing an electro-optical device. <P>SOLUTION: The hologram exposure apparatus 100 is provided with a distance measuring mechanism 150 for measuring a distance between a hologram mask 130 and a surface 112a of a photosensitive material film 112; an exposure light source 140; a scanning mechanism 142 for relatively moving the exposure light source 140 with respect to the hologram mask 130; and two PCs 152, 162 for controlling a stage driving section 124 and the scanning mechanism 142, so as to execute at least once for each of first scanning in which the interval is set at a distance obtained by adding a predetermined distance to a predetermined interval forming a focal point of an exposure light on the photosensitive material film 112 and the exposure light is emitted, and a second scanning in which the interval is set at a value obtained by subtracting a predetermined distance from the predetermined interval and the exposure light is emitted, on the basis of the distance information to be acquired from the distance measurement mechanism 150. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007280993(A) 申请公布日期 2007.10.25
申请号 JP20060101657 申请日期 2006.04.03
申请人 SEIKO EPSON CORP 发明人 IRIGUCHI CHIHARU
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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