PROCESS FOR PREPARATION OF SILICON ON INSULATOR SUBSTRATES WITH IMPROVED RESISTANCE TO FORMATION OF METAL PRECIPITATES

摘要

A process for inhibiting the formation of metal-precipitate defects in an SOI wafer is disclosed. The process includes heating the wafer for a time sufficient to reduce metal concentration in the monocrystalline film through diffusion into the bulk of the wafer. The insulator structure is made permeable via holes, channels, or streets spaced at a predetermined distance (L) apart to allow the diffusion of metals to occur.