| 摘要 |
PROBLEM TO BE SOLVED: To produce a Ta target capable of stably executing the production of a tin film and to provide a method for producing it. SOLUTION: This Ta target for film-forming a barrier material is the one in which the powder of one or >= two kinds among (C, B, Ir, W, Ge, CeO2 and RuO2) of <=49 atomic% and Ta powder of >=51 atomic% are sintered. The target can be obtd., e.g. by subjecting the powder of one or >= two kinds among (C, B, Ir, W, Ge, CeO2 and RuO2) of <=49 atomic% and Ta powder of >=51 atomic% to pressure sintering at >=700 deg.C under >=50 MPa.
|
