| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of making an MgO barrier layer for a TMR sensor.SOLUTION: The method includes depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.SELECTED DRAWING: Figure 3 |
