发明名称 |
Semicondudctor device |
摘要 |
A semiconductor device includes a plurality of nonvolatile memory cells ( 1 ). Each of the nonvolatile memory cells comprises a MOS type first transistor section ( 3 ) used for information storage, and a MOS type second transistor section ( 4 ) which selects the first transistor section. The second transistor section has a bit line electrode ( 16 ) connected to a bit line, and a control gate electrode ( 18 ) connected to a control gate control line. The first transistor section has a source line electrode ( 10 ) connected to a source line, a memory gate electrode ( 14 ) connected to a memory gate control line, and a charge storage region ( 11 ) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc<tm.
|
申请公布号 |
US2006220100(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20060415129 |
申请日期 |
2006.05.02 |
申请人 |
HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
TANAKA TOSHIHIRO;UMEMOTO YUKIKO;HIRAKI MITSURU;SHINAGAWA YUTAKA;FUJITO MASAMICHI;SUZUKAWA KAZUFUMI;TANIKAWA HIROYUKI;YAMAKI TAKASHI;KAMIGAKI YOSHIAKI;MINAMI SHINICHI;KATAYAMA KOZO;MATSUZAKI NOZOMU |
分类号 |
H01L29/788;G11C16/04;H01L21/28;H01L21/336;H01L21/8247;H01L27/105;H01L27/115;H01L29/423;H01L29/78;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|