MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness

摘要

It is an object to provide an SOI device capable of carrying out body fixation and implementing a quick and stable operation. A gate insulating film ( 11 ) having a thickness of 1 to 5 nm is provided between a portion other than a gate contact pad (GP) of a gate electrode ( 12 ) and an SOI layer ( 3 ), and a gate insulating film ( 110 ) having a thickness of 5 to 15 nm is provided between the gate contact pad (GP) and the SOI layer ( 3 ). The gate insulating film ( 11 ) and the gate insulating film ( 110 ) are provided continuously.