PROCESS FOR FORMING ARRAYED FIELD EFFECT TRANSISTORS HIGHLY INTEGRATED ON SUBSTRATE,申请号KR19910011836-传众专利搜索

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发明名称	PROCESS FOR FORMING ARRAYED FIELD EFFECT TRANSISTORS HIGHLY INTEGRATED ON SUBSTRATE
摘要
申请公布号	KR950014540(B1)	申请公布日期	1995.12.05
申请号	KR19910011836	申请日期	1991.07.12
申请人	TOSHIBA CO., LTD.	发明人	SHIROTA, RIICHIRO;MOMODOMI, MASAKI;NIKAYAMA, RYOZO;ARITOME, SEIICHI;KIRISAWA, RYOUHEI;ENDOH, TETSURO;WATANABE, SHIGEYOSHI
分类号	H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115	主分类号	H01L21/8247
代理机构		代理人
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