| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency amplifier having satisfactory high-frequency characteristics and further miniaturized. SOLUTION: The high-frequency amplifier 10 is provided with a high-frequency transistor 11, and a substrate 12 on which the high-frequency transistor 11 is mounted. Source electrode pads 12c, 12d to be connected to source lead terminals 11c, 11d of the high-frequency transistor 11 are formed on the front surface of the substrate 12, and a ground electrode 13 is formed on the bottom surface of the substrate 12. In this way, a bypass capacitor is configured between the source connection pads 12c, 12d and the ground electrode 13. The length L<SB>1</SB>of each of the source connection pads 12c, 12d is set at a value ofλ/4 of a wavelengthλof an operational frequency of the high-frequency transistor 11, and an end P<SB>1</SB>of the source connection pads 12c, 12d is an open end. COPYRIGHT: (C)2007,JPO&INPIT
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