| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a direct junction wafer where the generation of a void is suppressed, and a direct junction wafer where the number of voids is reduced. SOLUTION: In this method for manufacturing a direct junction wafer, a thermal oxide film or a CVD oxide film is formed on the surface of at least one wafer of a bond wafer and a base wafer; the wafer is joined through the oxide film to the other wafer; the bond wafer is made thin; a layered wafer is manufactured; an anneal process is carried to the layered wafer under an atmosphere containing any of inactive gas, hydrogen, and the mixed gas; and the oxide film between the bond wafer and the base wafer is removed so that the bond wafer can be directly joined to the base wafer. COPYRIGHT: (C)2006,JPO&NCIPI
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