QUANTUM WELL STRUCTURE, SEMICONDUCTOR LASER, SPECTRAL MEASURING INSTRUMENT AND METHOD OF MANUFACTURING QUANTUM WELL STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a quantum well structure, semiconductor laser, spectral measuring instrument and method of manufacturing the quantum well structure in which performance of characteristics can be improved by accomplishing the quantum well structure in which a large crystal of In composition thicker than the prior art is made into quantum well layer. SOLUTION: In a quantum well structure 12 with a quantum well layer 10 formed on an InP substrate, the quantum well layer 10 is crystal-grown at a temperature of≥440°C and≤510°C and the quantum well layer 10 has compression distortion of≥2% and <10%. COPYRIGHT: (C)2008,JPO&INPIT