Cu-Ga ALLOY SPUTTERING TARGET AND Cu-Ga ALLOY INGOT

摘要

PROBLEM TO BE SOLVED: To provide a Cu-Ga alloy sputtering target capable of suppressing the occurrence of fine cracks on the sputtering target surface and the occurrence of abnormal discharge during sputtering and stably depositing a film, and a Cu-Ga alloy ingot excellent in cutting workability and capable of accurately forming the Cu-Ga alloy sputtering target.SOLUTION: A Cu-Ga alloy sputtering target formed by a melt casting method includes Ga within 21 at.% or more and 31 at.% or less and the remainder having a composition consisting of Cu and inevitable impurities and includes: a (ζ+γ) phase 11 having an eutectoid structure of a ζ phase consisting of Cu and Ga and a tabular or acicular γ phase consisting of Cu and Ga; and a γ single phase 12 having a crystallized γ phase. In the (ζ+γ) phase 11, an average interval D of adjacent γ phases satisfies D<5 μm.SELECTED DRAWING: Figure 2