Semiconductor device

摘要

A semiconductor device includes: a plurality of first field effect transistors (FETs) having a gate formed on a main surface of a semiconductor substrate, and a drain and a source formed in regions on both sides of the gate; a plurality of second FETs having a gate formed on the main surface of the semiconductor substrate, and a drain and a source formed in regions on both sides of the gate; and an electrically conductive layer that penetrates the main surface and a back surface of the semiconductor substrate in a region between the pair of FETs; wherein the first and second FETs that form the pair of FETs are disposed close to each other so that their drains are opposite to each other; wherein region widths of the first and second FETs in a direction of shorter sides of sources thereof are substantially identical with region widths of the first and second FETs in a direction of shorter sides of drains thereof; wherein all the drains of the first and second FETs are electrically connected to each other; wherein all the gates of the first and second FETs are electrically connected to each other; and wherein all the sources of the first and second FETs are electrically connected to each other on the back surface of the semiconductor substrate through the conductive layer.