| 发明名称 |
Semiconductor chip with redundant thru-silicon-vias |
| 摘要 |
A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias. |
| 申请公布号 |
US9437561(B2) |
申请公布日期 |
2016.09.06 |
| 申请号 |
US201012878542 |
申请日期 |
2010.09.09 |
| 申请人 |
Advanced Micro Devices, Inc.;ATI Technologies ULC |
发明人 |
Black Bryan;Su Michael Z.;Refai-Ahmed Gamal;Siegel Joe;Prejean Seth |
| 分类号 |
H01L21/4763;H01L23/00;H01L23/48 |
主分类号 |
H01L21/4763 |
| 代理机构 |
|
代理人 |
Honeycutt Timothy M. |
| 主权项 |
1. A method of manufacturing, comprising:
forming a first plurality of conductive vias in a layer of a first semiconductor chip, the first plurality of conductive vias including first ends and second ends; forming conductive via extensions on each of the first ends of the first conductive vias; and forming a first conductor pad in ohmic contact with the conductive via extensions. |
| 地址 |
Sunnyvale CA US |
