发明名称 |
LINEAR LIGHT-EMITTING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a linear light-emitting device having improved efficiency in implanting electrons and holes in a light-emitting layer by reducing a large Schottky barrier generated between an electrode and a semiconductor layer. SOLUTION: The linear light-emitting device is provided with a pair of first and second linear electrodes provided opposed with each other and a linear light-emitting layer provided between a pair of the electrodes. At least one of a pair of the first and second electrodes is a transparent electrode and at least a buffer layer is also provided between the first or second electrode and the light-emitting layer. Since the buffer layer is provided, the size of a potential barrier between the electrode holding the buffer layer and the light-emitting layer becomes smaller than the Schottky barrier in the case where the electrode is placed directly in contact with the light-emitting layer. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008166343(A) |
申请公布日期 |
2008.07.17 |
申请号 |
JP20060351200 |
申请日期 |
2006.12.27 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
AOYAMA TOSHIYUKI;SATO EIICHI;TANIGUCHI REIKO;NASU SHOGO;ONO MASAYUKI;ODAGIRI MASARU;HASEGAWA KENJI |
分类号 |
H01L51/50;C23C16/06;C23C16/30;F21V8/00;F21Y105/00;H05B33/06;H05B33/12;H05B33/22 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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