| 摘要 |
PROBLEM TO BE SOLVED: To realize a fine structure of a nonvolatile memory with preventing the punch-through. SOLUTION: A split-gate memory cell (1) has a first and second diffused regions (3), (4) and a channel region (10) between the first and second diffused regions (3), (4). The channel region (10) includes a first channel region (13) having a specified impurity concentration. The first channel region (13) is provided apart from the first and second diffused regions (3), (4). COPYRIGHT: (C)2008,JPO&INPIT
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